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| HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Mounting torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C I S IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C IXFH16N90 IXFX16N90 VDSS = 900 V ID25 = 16 A RDS(on) = 0.65 W trr 200 ns Maximum Ratings 900 900 20 30 16 64 16 45 5 360 -55 ... +150 150 -55 ... +150 300 1.13/10 6 V V V V A A A mJ V/ns W C C C C Nm/lb.in. g TO-247 AD (IXFH) (TAB) PLUS 247TM (IXFX) G C (TAB) D Features l l l l l l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 900 2.0 4.5 100 TJ = 25C TJ = 125C 25 250 0.65 V V nA A A l l l VDSS VGS(th) I GSS I DSS RDS(on) VGS = 0 V, ID = 250A VDS = VGS, ID = 5 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V l l l DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Advantages l VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % l l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) or mounting clip or spring (PLUS 247TM) Space savings High power density (c) 1998 IXYS All rights reserved 97547(2/98) IXFH 16N90 IXFX 16N90 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 6 10 4500 VGS = 0 V, VDS = 25 V, f = 1 MHz 430 150 27 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 2 (External), 30 120 30 220 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 30 85 0.35 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain TO-247 AD (IXFH) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 ID25, pulse test 1 2 3 Dim. Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM I F = IS -di/dt = 100 A/s, VR = 100 V Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 16 64 1.5 A A V Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC PLUS 247TM Outline I F = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C 1 2 10 15 200 n s 350 n s C C A A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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